Silicon carbide substrate defect density reduced to 100/cm²; mass production of third-generation semiconductors accelerates

　　Silicon carbide (SiC), as the core material of the third-generation semiconductor, has been playing an increasingly important role in the semiconductor industry in recent years. Its excellent electrical properties and thermal stability give silicon carbide significant advantages in extreme environments such as high voltage, high frequency, and high temperature. Recently, the significant reduction in the defect density of silicon carbide substrates, especially down to below 100/cm², has injected strong momentum into the mass production process of third-generation semiconductors.

　　Traditional silicon carbide substrate preparation methods, such as Physical Vapor Transport (PVT), have promoted the industrialization of silicon carbide substrates, but crystal defect control has always been a bottleneck restricting industrial development. With the continuous advancement of technology, new preparation methods such as liquid phase methods are gradually emerging. The liquid phase method significantly reduces the nucleation barrier by optimizing the crystal growth environment, making the atomic arrangement more orderly, thereby effectively reducing the dislocation density and micropipe defects, and improving electron mobility.

　　The reduction of silicon carbide substrate defect density not only improves the performance and reliability of devices, but also reduces production costs and accelerates the commercialization of third-generation semiconductors. This breakthrough provides a higher quality material basis for new energy vehicles, ultra-high voltage power transmission, high-frequency 5G radio frequency devices, and other fields, and is expected to promote the rapid development of these fields.

　　In summary, the significant reduction in the defect density of silicon carbide substrates is an important milestone in the mass production process of third-generation semiconductors. With the continuous advancement of technology and further reduction of costs, third-generation semiconductors will play an important role in more fields, contributing to the technological progress and sustainable development of human society.