Atomic-level polishing process implemented, achieving a new limit of 0.1nm in silicon wafer surface roughness

　　Atomic-level polishing technology has made significant progress in the field of semiconductor manufacturing, successfully reducing the surface roughness of silicon wafers to a new limit of 0.1nm. The realization of this technology marks an important step in the pursuit of high precision and high performance in semiconductor manufacturing technology.

　　Traditional polishing processes often struggle to meet the high requirements of modern semiconductor devices for wafer surface quality. Atomic-level polishing, especially chemical mechanical polishing (CMP) technology, achieves atomic-level removal of the wafer surface by combining the dual effects of chemical and mechanical energy. This process uses chemical reagents in the polishing liquid to chemically react with the silicon wafer surface, while using the mechanical grinding action of nano-abrasives to remove surface defects at the atomic level, resulting in a globally flattened surface.

　　Carefully optimized polishing parameters, such as polishing fluid feed rate, polishing head speed, polishing pressure, and polishing duration, work together on the silicon wafer surface to significantly reduce its roughness to below 0.1nm. This achievement not only improves the surface quality of the silicon wafer, but also provides a more stable substrate for subsequent processes such as photolithography and etching, which helps to improve the final quality and yield of the chip.

　　In general, the implementation and application of atomic-level polishing technology is the result of the continuous pursuit of precision and performance in semiconductor manufacturing technology. This technological breakthrough not only meets the high requirements of modern semiconductor devices for wafer surface quality, but also injects new vitality into the continuous development of the semiconductor industry.