Diameter (mm) | 76.2 - 200 |
Diameter tolerance (mm) | X±0.3 |
Conductivity type/dopant | N-type/P-type |
Crystal orientation | ＜111＞、＜100＞ |
Resistivity range (Ω.cm) | 10～3000 |
Radial resistivity variation (%) | ≤20% (five-point method) |
Oxygen content (at cm-3 ) | ≤1×1016 |
Carbon content (at cm-3 ) | ≤2×1016 |
Thickness and tolerance (um) | According to customer requirements |
Other parameters: | According to SEMI standards or customer requirements |
Keywords:
GDFZ Lapped Wafer
GDFZ Lapped Wafer
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