Diameter (mm) | 76.2- 200 |
Diameter Tolerance (mm) | X±0.3 |
Conductivity Type | N-type |
Crystal Orientation | ＜111＞、＜100＞ |
Resistivity Range (Ω.cm) | 30～1000 |
Radial Resistivity Variation (%) | ≤8% (Ten-Point Method) |
Oxygen Content (at cm-3 ) | ≤1×1016 |
Carbon Content (at cm-3 ) | ≤2×1016 |
Thickness and Tolerance (um) | According to customer requirements |
Other parameters | According to SEMI standards or customer requirements |
Keywords:
GDFZ Lapped Wafer
GDFZ Lapped Wafer
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