NEWS
Global silicon wafer capacity expansion accelerates; 12-inch wafer supply gap may reach 10% in 2024
NEW

2025-07-14

Global silicon wafer capacity expansion accelerates; 12-inch wafer supply gap may reach 10% in 2024

In recent years, the expansion of global silicon wafer production capacity has shown an accelerating trend, which is particularly significant in 2024.

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Silicon carbide substrate defect density reduced to 100/cm²; mass production of third-generation semiconductors accelerates
NEW

2025-07-14

Silicon carbide substrate defect density reduced to 100/cm²; mass production of third-generation semiconductors accelerates

Silicon carbide (SiC), as the core material of the third-generation semiconductor, has been playing an increasingly important role in the semiconductor industry in recent years.

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Atomic-level polishing process implemented, achieving a new limit of 0.1nm in silicon wafer surface roughness
NEW

2025-07-14

Atomic-level polishing process implemented, achieving a new limit of 0.1nm in silicon wafer surface roughness

Atomic-level polishing technology has made significant progress in the field of semiconductor manufacturing, successfully reducing the surface roughness of silicon wafers to a new limit of 0.1nm.

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300mm silicon wafer yield exceeds 95%! Domestic semiconductor-grade crystal growth technology achieves milestone progress
NEW

2025-07-14

300mm silicon wafer yield exceeds 95%! Domestic semiconductor-grade crystal growth technology achieves milestone progress

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